2SK1519, 2SK1520
Static Drain to Source on State
Resistance vs. Temperature
0.5
V
GS
= 10 V
Pulse Test
I
D
= 50 A
0.3
20 A
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
Forward Transfer Admittance
y
fs
(S)
100
50
V
DS
= 10 V
Pulse Test
T
C
= –25°C
25°C
75°C
0.4
20
10
5
0.2
10 A
0.1
2
1
0.5
0
–40
0
40
80
120
160
1
2
5
10
20
50
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
1,000
10,000
di/dt = 100 A/µs, V
GS
= 0
Pulse Test
Capacitance C (pF)
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Reverse Recovery Time t rr (ns)
500
200
100
50
1,000
Coss
100
Crss
V
GS
= 0
f = 1 MHz
10
20
10
0.5
1
2
5
10
20
50
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
1,000
V
DD
= 100 V
250 V
400 V
V
GS
V
DS
Switching Characteristics
Gate to Source Voltage V
GS
(V)
20
1,000
500
t
d (off)
Switching Time t (ns)
800
16
600
12
200
100
50
t
r
t
f
400
8
t
d (on)
200
V
DD
= 400 V
250 V
100 V
80
160
240
I
D
= 30 A
Pulse Test
320
400
4
20
10
0.5
V
GS
= 10 V, PW = 2
µs
.
duty < 1%, V
DD
= 30 V
.
1
2
5
10
20
50
0
0
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.3.00 Apr 27, 2006 page 4 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
