2SK1521, 2SK1522
Static Drain to Source on State
Resistance vs. Temperature
0.5
Pulse Test
0.4
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
Forward Transfer Admittance
y
fs
(S)
50
T
C
= –25°C
25°C
75°C
20
10
5
0.3
I
D
= 50 A
20 A
0.2
2
1
V
DS
= 20 V
Pulse Test
1
2
5
10
20
50
0.1
10 A
0
–40
0
40
80
120
160
0.5
0.5
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
500
10,000
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Reverse Recovery Time trr (ns)
Capacitance C (pF)
200
100
50
di/dt = 100 A/µs, Ta = 25°C
V
GS
= 0
Pulse Test
1,000
Coss
20
10
100
Crss
V
GS
= 0
f = 1 MHz
10
5
0.5
1
2
5
10
20
50
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
500
20
V
DD
= 100 V
250 V
400 V
300
V
DS
200
I
D
= 50 A
100
V
DD
= 400 V
250 V
100 V
0
80
160
240
320
400
0
4
8
V
GS
12
Switching Characteristics
Gate to Source Voltage V
GS
(V)
5,000
.
V
GS
= 10 V, V
DD
= 30 V
.
PW = 2
µs,
duty < 1%
Drain to Source Voltage V
DS
(V)
Switching Time t (ns)
400
16
2,000
1,000
500
t
f
200
100
50
0.5
t
r
t
d (on)
t
d (off)
1
2
5
10
20
50
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 4 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
