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2SK1404 参数 Datasheet PDF下载

2SK1404图片预览
型号: 2SK1404
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET [Silicon N Channel MOS FET]
分类和应用:
文件页数/大小: 7 页 / 81 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SK1404
Main Characteristics
Power vs. Temperature Derating
60
Maximum Safe Operation Area
50
20
Channel Dissipation Pch (W)
Drain Current I
D
(A)
10
5
PW
10
40
10
1
µ
s
0
µ
s
2
1
0.5
0.2
0.1
D
m
C
O
pe
ra
tio
n
=
10
s
s
(1
ot
Sh
20
(T
m
Operation in
this area is
limited by R
DS (on)
Ta = 25°C
c
)
=
25
°C
)
0
0
50
100
150
0.05
1
3
10
30
100
300
1000
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
10
10 V
6V
Pulse Test
5V
4.5 V
10
Typical Transfer Characteristics
V
DS
= 20 V
Pulse Test
Drain Current I
D
(A)
Drain Current I
D
(A)
8
8
6
6
4
4V
2
V
GS
= 3 V
0
0
10
20
30
40
3.5 V
4
Tc = 75°C
2
25°C
–25°C
0
0
2
4
6
8
10
50
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Drain Current
50
Pulse Test
20
10
5
V
GS
= 10 V
2
1
0.5
0.2
15 V
Drain to Source Saturation Voltage
V
DS (on)
(V)
10
Pulse Test
8
I
D
= 5 A
6
4
2A
2
1A
0
0
4
8
12
16
20
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
0.5
1
2
5
10
20
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.3.00 May 15, 2006 page 3 of 6