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2SK1307 参数 Datasheet PDF下载

2SK1307图片预览
型号: 2SK1307
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET [Silicon N Channel MOS FET]
分类和应用: 局域网
文件页数/大小: 7 页 / 83 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SK1307
Main Characteristics
Power vs. Temperature Derating
60
100
Maximum Safe Operation Area
Channel Dissipation Pch (W)
10
Drain Current I
D
(A)
30
10
PW
µ
s
0
µ
s
40
)
)
ot
°
C
Sh
25
=
(1
s
s
m
m
(T
C
1
n
10
t io
=
ra
pe
10
3
1.0
0.3
0.1
1
D
C
O
20
Operation in this Area
is Limited by R
DS (on)
Ta = 25°C
0
50
100
150
3
10
30
100
300
1,000
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
50
Typical Transfer Characteristics
20
10 V
7V
5V
Pulse Test
4V
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
30
Drain Current I
D
(A)
40
16
3.5 V
12
20
8
75
°
C
T
C
= 25
°
C
–25
°
C
3V
10
V
GS
= 2.5 V
4
0
4
8
12
16
20
0
1
2
3
4
5
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State
Resistance vs. Drain Current
0.5
Drain to Source Saturation Voltage
V
DS (on)
(V)
2.0
1.6
Pulse Test
I
D
= 20 A
0.2
Pulse Test
V
GS
= 4 V
10 V
1.2
0.1
0.05
0.8
10 A
5A
0.02
0.01
0.005
2
5
10
20
50 100
200
0.4
0
2
4
6
8
10
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 6