2SK1317
Static Drain to Source on State
Resistance vs. Temperature
20
I
D
= 2 A
16
V
GS
= 15 V
Pulse Test
0.5 A, 1 A
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
Forward Transfer Admittance
y
fs
(S)
10
5
V
DS
= 20 V
Pulse Test
12
2
1.0
0.5
–25°C
Ta = 25°C
75°C
8
4
0.2
0.1
0.05 0.1
0
–40
0
40
80
120
160
0.2
0.5
1.0
2
5
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
5,000
10,000
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Reverse Recovery Time t rr (ns)
Capacitance C (pF)
2,000
1,000
500
di/dt = 100 A/µs, Ta = 25°C
V
GS
= 0
Pulse Test
1,000
Ciss
200
100
50
0.05
100
Coss
Crss
10
0.1
0.2
0.5
1.0
2
5
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
1,000
Switching Characteristics
20
1,000
Drain to Source Voltage V
DS
(A)
Gate to Source Voltage V
GS
(V)
Switching Time t (ns)
800
V
DD
= 250 V
400 V
600 V
V
GS
V
DS
16
500
V
GS
= 10 V V
DD
= 30 V
PW = 2
µs,
duty < 1%
•
•
t
d (off)
200
100
t
f
50
t
r
t
d (on)
600
12
8
400
V
DD
= 600 V
200
400 V
250 V
20
40
60
4
I
D
= 2.5 A
0
80
100
20
10
0.05
0
0.1
0.2
0.5
1.0
2
5
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 4 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
