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2SK1329 参数 Datasheet PDF下载

2SK1329图片预览
型号: 2SK1329
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET [Silicon N Channel MOS FET]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲局域网
文件页数/大小: 7 页 / 82 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SK1301
Main Characteristics
Power vs. Temperature Derating
60
100
)
µ
s
ot
°
C)
10
Sh
25
µ
s
(1
=
0
s
10
m
(T
C
10
n
=
ratio
PW
Ope
C
D
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current I
D
(A)
30
10
3
1
0.3
0.1
40
1
m
s
20
Operation in this area
is limited by R
DS (on)
Ta = 25
°
C
100
300
1000
0
50
100
150
1
3
10
30
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
20
Typical Transfer Characteristics
20
10 V
4V
7V
Pulse Test
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
12
Drain Current I
D
(A)
16
3.5 V
16
12
3V
8
8
75
°
C
T
C
= 25
°
C
–25
°
C
4
2.5 V
V
GS
= 2.5 V
4
0
4
8
12
16
20
0
1
2
3
4
5
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage
V
DS (on)
(V)
2.5
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State
Resistance vs. Drain Current
0.5
0.2
20 A
2.0
V
GS
= 4 V
10 V
1.5
Pulse Test
10 A
0.1
0.05
1.0
I
D
= 5 A
0.02
Pulse Test
0.5
0.01
0.005
1
2
5
10
20
50
100
0
2
4
6
8
10
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 6