2SK1301
Static Drain to Source on State
Resistance vs. Temperature
0.5
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
Forward Transfer Admittance
y
fs
(S)
I
D
= 20 A
Pulse Test
50
V
DS
= 10 V
Pulse Test
–25
°
C
0.4
20
10
5
2
1
T
C
= 25
°
C
75
°
C
0.3
V
GS
= 4 V
10 A
5A
20 A
10 A
5A
0.2
0.1
V
GS
= 10 V
0
–40
0
40
80
120
160
0.5
0.2
0.5
1.0
2
5
10
20
Case Temperature T
C
(°C)
Drain Current I
D
(A)
Body to Drain Diode Reverse
Recovery Time
500
10000
di/dt = 50 A/µs, Ta = 25
°
C
V
GS
= 0
Pulse Test
Typical Capacitance vs.
Drain to Source Voltage
Reverse Recovery Time trr (ns)
Capacitance C (pF)
200
100
50
V
GS
= 0
f = 1 MHz
1000
Ciss
Coss
100
Crss
20
10
5
0.2
10
0.5
1.0
2
5
10
20
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Switching Characteristics
20
Drain to Source Voltage V
DS
(V)
100
V
DD
= 25 V
50 V
V
DS
80 V
V
DD
= 80 V
Gate to Source Voltage V
GS
(V)
500
200
100
tf
50
tr
td(on)
V
GS
= 10 V V
DD
= 30 V
PW = 2
µs,
duty < 1 %
•
•
V
GS
12
60
50 V
40
8
Switching Time t (ns)
80
16
td(off)
20
10
5
0.2
20
25 V
0
20
40
60
80
I
D
= 15 A
4
0
100
0.5
1
2
5
10
20
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 4 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
