2SK1305
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
y
fs
(S)
0.5
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
50
V
DS
= 10 V
Pulse Test
20
10
5
2
1
0.5
0.1
25
°
C
75
°
C
Pulse Test
0.4
I
D
= 10 A
5A
2A
10 A
5A
T
C
= –25
°
C
0.3
V
GS
= 4 V
2A
0.2
10 V
0.1
0
–40
0
40
80
120
160
0.2
0.5
1
2
5
10
Case Temperature T
C
(°C)
Drain Current I
D
(A)
Body to Drain Diode Reverse
Recovery Time
500
10,000
Typical Capacitance vs.
Drain to Source Voltage
Reverse Recovery Time trr (ns)
Capacitance C (pF)
200
100
50
di/dt = 50 A/µs
V
GS
= 0, Ta = 25
°
C
Pulse Test
1,000
Ciss
20
10
5
0.1
100
Coss
V
GS
= 0
f = 1 MHz
10
0.2
0.5
1
2
5
10
0
10
20
30
Crss
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
200
160
20
500
Switching Characteristics
Gate to Source Voltage V
GS
(V)
td(off)
120
V
DS
V
DD
= 25 V
50 V
80 V
V
GS
12
Switching Time t (ns)
16
200
100
50
20
10
5
0.2
tf
tr
V
GS
= 10 V, PW = 2
µs
.
duty < 1 % V
DD
=
30 V
.
td(on)
0.5
1
2
5
10
20
80
40
8
I
D
= 10 A
4
V
DD
= 80 V
50 V
25 V
8
16
24
0
32
0
40
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 4 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
