欢迎访问ic37.com |
会员登录 免费注册
发布采购

2SK1300 参数 Datasheet PDF下载

2SK1300图片预览
型号: 2SK1300
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET [Silicon N Channel MOS FET]
分类和应用: 晶体晶体管功率场效应晶体管局域网
文件页数/大小: 7 页 / 82 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
 浏览型号2SK1300的Datasheet PDF文件第1页浏览型号2SK1300的Datasheet PDF文件第2页浏览型号2SK1300的Datasheet PDF文件第4页浏览型号2SK1300的Datasheet PDF文件第5页浏览型号2SK1300的Datasheet PDF文件第6页浏览型号2SK1300的Datasheet PDF文件第7页  
2SK1300
Main Characteristics
Power vs. Temperature Derating
60
100
Maximum Safe Operation Area
Ta = 25
°
C
30
10
Channel Dissipation Pch (W)
Drain Current ID (A)
µ
s
0
10
40
10
C
D
PW
1
µ
s
s
=
m
3
1
0.3
0.1
10
tio
ra
pe
O
m
s
(1
20
Sh
Operation in this area
is limited by R
DS (on)
n
(T
C
ot
)
=
)
°
C
25
0
50
100
150
1
3
10
30
100
300
1000
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
20
Typical Transfer Characteristics
10
10 V
Pulse Test
6V
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
Drain Current I
D
(A)
16
4V
8
12
6
3.5 V
8
4
3V
4
V
GS
= 2.5 V
2
T
C
= 75
°
C
25
°
C
–25
°
C
2
3
4
5
0
4
8
12
16
20
0
1
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS (on)
(V)
2.5
2.0
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
10 A
Pulse Test
2
1
0.5
V
GS
= 4 V
10 V
1.5
5A
1.0
0.2
0.1
0.05
0.5
0.5
I
D
= 2 A
0
2
4
6
8
10
1
2
5
10
20
50
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 6