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2SK1338 参数 Datasheet PDF下载

2SK1338图片预览
型号: 2SK1338
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET [Silicon N Channel MOS FET]
分类和应用:
文件页数/大小: 7 页 / 81 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SK1338
Main Characteristics
Power vs. Temperature Derating
60
Maximum Safe Operation Area
10
5
ar
ea
Channel Dissipation Pch (W)
10
µ
s
10
Drain Current I
D
(A)
O
is per
lim at
ite ion
d in
by th
R is
(o
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0
n)
40
1
m
µ
s
)
)
ot
°
C
sh
25
=
(1
s
(T
C
m
10
ion
=
rat
e
PW
Op
C
DS
D
s
20
Ta = 25
°
C
0
50
100
150
1
3
10
30
100
300 1,000
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
5
Pulse Test
10 V
5
Typical Transfer Characteristics
V
DS
= 20 V
Pulse Test
Drain Current I
D
(A)
5.5 V
3
5.0 V
2
4.5 V
1
4.0 V
V
GS
= 3.0 V
0
10
20
30
40
50
Drain Current I
D
(A)
4
6V
4
–25°C
3
T
C
= 25°C
75°C
2
1
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
50
Pulse Test
40
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
50
Pulse Test
20
10
5
V
GS
= 10 V
15 V
Drain to Source Saturation Voltage V
DS (on)
(V)
30
I
D
= 3 A
2A
1A
20
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
2
1
0.5
0.05
10
0
4
8
12
16
20
0.1
0.2
0.5
1
2
5
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 6