2SK1254(L), 2SK1254(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at T
C
= 25
°
C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
*1
Ratings
120
±20
3
12
3
20
150
–55 to +150
Unit
V
V
A
A
A
W
°
C
Pch
*2
Tch
Tstg
°
C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery
time
Note:
3. Pulse test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
120
±20
—
—
1.0
—
—
2.4
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.30
0.35
4.0
420
190
25
5
20
150
45
0.95
160
Max
—
—
±10
100
2.0
0.40
0.55
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
I
F
= 3 A, V
GS
= 0
I
F
= 3 A, V
GS
= 0,
di
F
/dt = 50 A/µs
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100
µA, V
DS
= 0
V
GS
=
±16
V, V
DS
= 0
V
DS
= 100 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 2 A, V
GS
= 10 V *
3
I
D
= 2 A, V
GS
= 4 V *
I
D
= 2 A, V
DS
= 10 V *
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
I
D
= 2 A, V
GS
= 10 V,
R
L
= 15
Ω
3
3
Rev.2.00 Sep 07, 2005 page 2 of 7
RENESAS [ RENESAS TECHNOLOGY CORP ]
