2SK1298
Static Drain to Source on State
Resistance vs. Temperature
0.05
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
Forward Transfer Admittance
y
fs
(S)
50
20
10
5
2
1.0
0.04
Pulse Test
I
D
= 50 A
10 A, 20 A
V
GS
= 4 V
0.03
–25
°
C
T
C
= 25
°
C
75
°
C
0.02
50 A
V
GS
= 10 V
10 A, 20 A
0.01
V
DS
= 10 V
Pulse Test
0
–40
0
40
80
120
160
0.5
1.0
2
5
10
20
50
Case Temperature T
C
(°C)
Drain Current I
D
(A)
Body to Drain Diode Reverse
Recovery Time
500
10000
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Reverse Recovery Time trr (ns)
Ciss
Capacitance C (pF)
200
100
50
20
10
5
0.5
1000
Coss
Crss
100
di/dt = 50 A/µs, Ta = 25
°
C
V
GS
= 0
Pulse Test
10
1.0
2
5
10
20
50
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
100
80
20
1000
Switching Characteristics
Gate to Source Voltage V
GS
(V)
td(off)
60
V
DD
= 10 V
25 V
50 V
V
DS
V
GS
50 V
Switching Time t (ns)
16
500
200
100
50
tr
tf
12
40
20
8
4
td(on)
20
10
0.5
V
GS
= 10 V V
DD
= 30 V
PW = 2
µs,
duty < 1 %
•
•
25 V
V
DD
= 10 V
0
40
80
I
D
= 40 A
120
160
0
200
1.0
2
5
10
20
50
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 4 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
