2SK1165, 2SK1166
Main Characteristics
Power vs. Temperature Derating
120
100
30
10
3
1.0
0.3
0.1
1
3
10
10
0
10
µ
s
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current I
D
(A)
O
is per
Lim at
ite ion
d in
by th
R is A
DS
re
(o
a
n
80
40
µ
s
PW
1
D
m
C
=
s
O
10
pe
ra
ms
tio
(
n
1s
(T
ho
t)
C
=
25
°
C
)
Ta = 25°C
)
2SK1166
2SK1165
30
100
300
1,000
0
50
100
150
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
20
16
20
10 V
6V
8V
5.5 V
Typical Transfer Characteristics
Drain Current I
D
(A)
Drain Current I
D
(A)
16
V
DS
= 20 V
Pulse Test
12
5.0 V
12
8
4.5 V
4
V
GS
= 4 V
0
10
20
30
40
50
8
75°C
–25°C
T
C
= 25°C
4
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
15 A
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
V
GS
= 10 V
Drain to Source Saturation Voltage V
DS (on)
(V)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
8
2
1.0
0.5
6
10 A
4
I
D
= 5 A
2
15 V
0.2
0.1
0.05
0.5
0
4
8
12
16
20
1.0
2
5
10
20
50
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
