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2SK1154 参数 Datasheet PDF下载

2SK1154图片预览
型号: 2SK1154
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET [Silicon N Channel MOS FET]
分类和应用: 晶体晶体管功率场效应晶体管局域网
文件页数/大小: 7 页 / 83 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SK1153, 2SK1154
Main Characteristics
Power vs. Temperature Derating
60
50
20
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current I
D
(A)
40
10
5
2
0.1
0.5
0.2
0.01
0.05
20
is
10
th
0
in ted
µ
s
onlimi
)
D
i
1
at is
(on
C
r
m
O
pe ea
DS
s
pe
O ar R
y
ra
b
tio
n
(T
C
=
25
°
C
)
Ta = 25°C
2SK1154
2SK1153
10
µ
s
PW
=
10
m
s
(1
)
ot
sh
0
50
100
150
1
3
10
30
100
300
1,000
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
5
Pulse Test
10 V
8V
6V
5.5 V
5V
5
Typical Transfer Characteristics
–25°C
Drain Current I
D
(A)
Drain Current I
D
(A)
4
4
V
DS
= 10 V
Pulse Test
T
C
= 25°C
3
3
75°C
2
2
4.5 V
1
V
GS
= 4 V
1
0
4
8
12
16
20
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
50
Pulse Test
V
GS
= 10 V
Drain to Source Saturation Voltage
V
DS (on)
(V)
20
Pulse Test
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
16
20
10
5
12
8
4
3A
2A
I
D
= 1 A
2
1.0
0.5
0.1
15 V
0
4
8
12
16
20
0.2
0.5
1.0
2
5
10
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 6