2SK1070
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Gate cutoff current
I
GSS
—
Gate to source breakdown voltage
V
(BR)GSS
–22
1
Drain current
I
DSS
*
12
Gate to source cutoff voltage
V
GS(off)
0
Forward transfer admittance
|y
fs
|
20
Input capacitance
Ciss
—
Notes: 1. The 2SK1070 is grouped by I
DSS
as follows.
Grade
C
D
E
Mark
PIC
PID
PIE
I
DSS
12 to 22
18 to 30
27 to 40
Typ
—
—
—
—
30
9
Max
–10
—
40
–2.5
—
—
Unit
nA
V
mA
V
mS
pF
Test conditions
V
GS
= –15 V, V
DS
= 0
I
G
= –10
µA,
V
DS
= 0
V
DS
= 5 V, V
GS
= 0, Pulse test
V
DS
= 5 V, I
D
= 10
µA
V
DS
= 5 V, V
GS
= 0, f = 1 kHz
V
DS
= 5 V, V
GS
= 0, f = 1 MHz
Main Characteristics
Maximum Channel Dissipation Curve
Typical Output Characteristics
20
V
GS
= 0 V
Channel Power Dissipation Pch (mW)
150
Drain Current I
D
(mA)
16
–0.1
–0.2
–0.3
100
12
8
50
–0.4
–0.5
–0.6
4
0
50
100
150
Ambient Temperature Ta (ºC)
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Forward Transfer Admittance
vs. Drain Current
Typical Transfer Characteristics
20
V
DS
= 5 V
100
Drain Current I
D
(mA)
16
Forward Transfer Admittance
y
fs
(mS)
V
DS
= 5 V
f = 1 kHz
10
12
8
1.0
4
0
–1.25
–1.0 –0.75 –0.5 –0.25
Gate to Source Voltage V
GS
(V)
0
0.1
0.1
1.0
10
Drain Current I
D
(mA)
100
Rev.2.00, Mar.14.2005, page 2 of 4
RENESAS [ RENESAS TECHNOLOGY CORP ]
