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2SJ471 参数 Datasheet PDF下载

2SJ471图片预览
型号: 2SJ471
PDF下载: 下载PDF文件 查看货源
内容描述: 硅P通道DV -L MOS FET [Silicon P Channel DV-L MOS FET]
分类和应用: 晶体晶体管功率场效应晶体管
文件页数/大小: 7 页 / 83 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SJ471
Main Characteristics
Power vs. Temperature Derating
40
–500
–200
Maximum Safe Operation Area
Pch (W)
I
D
(A)
10
µs
)
ot
µ
s
sh
s
0
1
m
10
s(
m
30
–100
–50
PW
Channel Dissipation
1
Drain Current
20
–20
DC
=
10
–10
–5
–2
–1
10
Operation in
this area is
limited by R
DS (on)
n
tio
ra
pe
O
c=
(T
)
°C
25
0
0
50
100
150
200
Ta = 25°C
–0.5
–0.1 –0.3
–1
–3
–10
–30
–100
Case Temperature
Tc (°C)
Drain to Source Voltage
V
DS
(V)
Typical Output Characteristics
–10 V
–6 V
Typical Transfer Characteristics
–50
–50
Pulse Test
–5 V
–4.5 V
–4 V
Tc = –25°C
–3.5 V
I
D
(A)
–40
I
D
(A)
–40
25°C
–30
75°C
–30
Drain Current
–3 V
–20
V
GS
= –2.5 V
Drain Current
–20
–10
–10
V
DS
= –10 V
Pulse Test
0
0
–2
–4
–6
–8
–10
0
0
–1
–2
–3
–4
–5
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage
V
GS
(V)
Drain to Source Saturation Voltage V
DS (on)
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–1.0
Pulse Test
–0.8
Static Drain to Source on State Resistance
vs. Drain Current
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
0.5
Pulse Test
0.2
0.1
0.05
V
GS
= –4 V
–0.6
I
D
= –20 A
–0.4
–10 A
–0.2
–5 A
0.02
0.01
–1
–10 V
0
0
–4
–8
–12
–16
–20
–2
–5
–10
–20
–50
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 6