2SJ160, 2SJ161, 2SJ162
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
2SJ160
2SJ161
2SJ162
Gate to source voltage
Drain current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Note:
1. Value at Tc = 25°C
V
GSS
I
D
I
DR
Note 1
Pch
Tch
Tstg
Symbol
V
DSX
Value
–120
–140
–160
±15
–7
–7
100
150
–55 to +150
V
A
A
W
°C
°C
Unit
V
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
2SJ160
2SJ161
2SJ162
V
(BR) GSS
V
GS (off)
V
DS (sat)
|y
fs
|
Ciss
Coss
Crss
t
on
t
off
Symbol
V
(BR) DSX
Min
–120
–140
–160
±15
–0.15
—
0.7
—
—
—
—
—
Typ
—
—
—
—
—
—
1.0
900
400
40
230
110
Max
—
—
—
—
–1.45
–12
1.4
—
—
—
—
—
Unit
V
V
V
V
V
V
S
pF
pF
pF
ns
ns
I
G
=
±100 µA,
V
DS
= 0
I
D
= –100 mA, V
DS
= –10 V
I
D
= –7 A, V
GS
= 0
Note 2
I
D
= –3 A, V
DS
= –10 V
V
GS
= 5 V, V
DS
= –10 V,
f = 1 MHz
V
DD
= –20 V I
D
= –4 A
Note 2
Test Conditions
I
D
= –10 mA, V
GS
= 10 V
Gate to source breakdown voltage
Gate to source cutoff voltage
Drain to source saturation voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Note:
2. Pulse test
Rev.2.00 Sep 07, 2005 page 2 of 5
RENESAS [ RENESAS TECHNOLOGY CORP ]
