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2SD468 参数 Datasheet PDF下载

2SD468图片预览
型号: 2SD468
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅外延 [Silicon NPN Epitaxial]
分类和应用:
文件页数/大小: 6 页 / 157 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SD468
Main Characteristics
Maximum Collector Dissipation Curve
Typical Output Characteristics
1,000
Collector Power Dissipation P
C
(W)
1.2
Collector Current I
C
(mA)
800
7
6
P
C
=
0.8
600
5
4
0.
9
W
400
3
2
0.4
200
1mA
I
B
= 0
0
50
100
150
0
0.4
0.8
1.2
1.4
1.6
Ambient Temperature Ta (°C)
Collector to Emitter Voltage V
CE
(V)
DC Current Transfer Ratio vs.
Collector Current
5,000
Typical Transfer Characteristics
1,000
DC Current Transfer Ratio h
FE
V
CE
= 2 V
V
CE
= 2 V
2,000
1,000
500
200
100
50
20
10
5
1
3
10
30
100
300 1,000
Ta = 75°C
25°C
Collector Current I
C
(mA)
300
Ta = 75°C
100
30
10
3
1
0
0.2
0.4
0.6
0.8
1.0
25°C
Base to Emitter Voltage V
BE
(V)
Collector to Emitter Saturation
Voltage vs. Collector Current
Collector Current I
C
(mA)
Gain Bandwidth Product vs.
Collector Current
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
Gain Bandwidth Product f
T
(MHz)
0.25
I
C
= 10 I
B
0.20
300
V
CE
= 2 V
200
0.15
0.10
100
0.05
Ta = 75°C
25°C
0
1
3
10
30
100
300 1,000
0
10
30
100
300
1,000
Collector Current I
C
(mA)
Collector Current I
C
(mA)
Rev.2.00 Aug 10, 2005 page 3 of 5