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2SD2107 参数 Datasheet PDF下载

2SD2107图片预览
型号: 2SD2107
PDF下载: 下载PDF文件 查看货源
内容描述: 硅NPN三重扩散 [Silicon NPN Triple Diffused]
分类和应用:
文件页数/大小: 7 页 / 142 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SD2107
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Symbol
V
(BR)CBO
Min
70
60
5
60
35
Typ
1.0
1.0
1.2
V
V
V
Max
10
10
200
Unit
V
V
V
µA
Test conditions
I
C
= 10
µA,
I
E
= 0
I
C
= 50 mA, R
BE
=
I
E
= 10
µA,
I
C
= 0
V
CB
= 60 V, I
E
= 0
V
CE
= 50 V, R
BE
=
V
CE
= 4 V, I
C
= 1 A*
1
V
CE
= 4 V, I
C
= 0.1 A*
1
V
CE
= 4 V, I
C
= 1 A*
1
I
C
= 2 A, I
B
= 0.2 A*
1
I
C
= 2 A, I
B
= 0.2 A*
1
Collector to emitter breakdown V
(BR)CEO
voltage
Emitter to base breakdown
voltage
Collector cutoff current
V
(BR)EBO
I
CBO
I
CEO
DC current transfer ratio
h
FE1
*
2
h
FE2
Base to emitter voltage
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
V
BE
V
CE(sat)
V
BE(sat)
Notes: 1. Pulse test.
2. The 2SD2107 is grouped by h
FE1
as follows.
B
60 to 120
C
100 to 200
Maximum Collector Dissipation Curve
30
Collector power dissipation P
C
(W)
5
Collector current I
C
(A)
4
Typical Output Characteristics
T
C
= 25°C
60
50
40
30
P
C
20
=
3
2
1
20
25
W
10
10 mA
0
50
100
Case temperature T
C
(°C)
150
0
4
2
6
8
10
Collector to emitter voltage V
CE
(V)