2SD2101
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
P
C
P
C
*
1
Junction temperature
Storage temperature
Note:
1. Value at T
C
= 25°C.
Tj
Tstg
Rating
200
200
7
10
15
2
30
150
–55 to +150
°C
°C
Unit
V
V
V
A
A
W
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Symbol
V
(BR)CBO
Min
200
200
170
7
—
—
1500
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
—
—
Max
—
—
—
—
10
50
—
1.5
3.0
2.0
3.5
V
V
Unit
V
V
V
V
µA
Test conditions
I
C
= 0.1 mA, I
E
= 0
I
C
= 25 mA, R
BE
=
∞
I
C
= 5 A, L = 5 mH
I
E
= 50 mA, I
C
= 0
V
CB
= 180 V, I
E
= 0
V
CE
= 180 V, R
BE
=
∞
V
CE
= 3 V, I
C
= 5 A*
1
I
C
= 5 A, I
B
= 10 mA*
1
I
C
= 10 A, I
B
= 100 mA*
1
I
C
= 5 A, I
B
= 10 mA*
1
I
C
= 10 A, I
B
= 100 mA*
1
Collector to emitter breakdown V
(BR)CEO
voltage
Collector to emitter sustain
voltage
Emitter to base breakdown
voltage
Collector cutoff current
V
CEO(SUS)
V
(BR)EBO
I
CBO
I
CEO
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Note:
1. Pulse test.
h
FE
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
RENESAS [ RENESAS TECHNOLOGY CORP ]
