欢迎访问ic37.com |
会员登录 免费注册
发布采购

2SD1418 参数 Datasheet PDF下载

2SD1418图片预览
型号: 2SD1418
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅外延 [Silicon NPN Epitaxial]
分类和应用:
文件页数/大小: 6 页 / 98 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
 浏览型号2SD1418的Datasheet PDF文件第1页浏览型号2SD1418的Datasheet PDF文件第2页浏览型号2SD1418的Datasheet PDF文件第4页浏览型号2SD1418的Datasheet PDF文件第5页浏览型号2SD1418的Datasheet PDF文件第6页  
2SD1418
Main Characteristics
Maximum Collector Dissipation Curve
Collector Power Dissipation P
C
(W)
(on the alumina ceramic board)
1.2
1.0
Typical Output Characteristics
35
30
25
20
15
10
5
0.4
2
1
0.5 mA
I
B
= 0
Collector Current I
C
(A)
50
100
150
0.8
0.8
0.6
0.4
0.2
0
0
2
4
6
8
10
Ambient Temperature Ta (°C)
Collector to Emitter Voltage V
CE
(V)
Typical Transfer Characteristics
500
V
CE
= 5 V
DC Current Transfer Ratio vs. Collector Current
300
V
CE
= 5 V
250
200
150
100
50
0
°
C
Ta = 75
25
–25
Collector Current I
C
(mA)
200
100
50
20
10
5
2
1
0
0.2
0.4
0.6
0.8
1.0
Ta = 75
°
C
25
–2 5
DC Current Transfer Ratio h
FE
1
3
10
30
100
300 1,000
Base to Emitter Voltage V
BE
(V)
Collector Current I
C
(mA)
Saturation Voltage vs. Collector Current
Collector to Emitter Saturation Voltage V
CE(sat)
(V)
Base to Emitter Saturation Voltage V
BE(sat)
(V)
Gain Bandwidth Product f
T
(MHz)
1.2
1.0
0.8
V
BE(sat)
Gain Bandwidth Product vs. Collector Current
240
200
160
120
80
40
0
10
V
CE
= 5 V
Pulse
0.6
I
C
= 10 I
B
Pulse
0.5
0.4
0.3
0.2
0.1
V
CE(sat)
0
1,000
0.6
0.4
0.2
0
1
3
10
30
100
300
30
100
300
1,000
Collector Current I
C
(mA)
Collector Current I
C
(mA)
Rev.2.00 Aug 10, 2005 page 3 of 5