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2SD1306 参数 Datasheet PDF下载

2SD1306图片预览
型号: 2SD1306
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅外延 [Silicon NPN Epitaxial]
分类和应用: 晶体小信号双极晶体管光电二极管
文件页数/大小: 6 页 / 71 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SD1306
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Collector to base breakdown voltage
V
(BR)CBO
Collector to emitter breakdown voltage
V
(BR)CEO
Emitter to base breakdown voltage
V
(BR)EBO
Collector cutoff current
I
CBO
DC current transfer ratio
h
FE
*
1
Base to emitter voltage
V
BE
Collector to emitter saturation voltage
V
CE(sat)
Gain bandwidth product
f
T
Notes: 1. The 2SD1306 is grouped by h
FE
as follows.
2. Pulse test
Grade
D
E
Mark
ND
NE
h
FE
250 to 500
400 to 800
Min
30
15
5
250
Typ
250
Max
1.0
800
1.0
0.5
Unit
V
V
V
µA
V
V
MHz
Test conditions
I
C
= 10
µA,
I
E
= 0
I
C
= 1 mA, R
BE
=
I
E
= 10
µA,
I
C
= 0
V
CB
= 20 V, I
E
= 0
V
CE
= 1 V, I
C
= 150 mA*
2
V
CE
= 1 V, I
C
= 150 mA*
2
I
C
= 500 mA, I
B
= 50 mA*
2
V
CE
= 1 V, I
C
= 150 mA*
2
Rev.2.00 Aug 10, 2005 page 2 of 5