2SB857, 2SB858
Electrical Characteristics
(Ta = 25°C)
2SB857
Item
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Min
–70
–50
–5
—
60
35
—
—
—
Typ
—
—
—
—
—
—
—
—
15
Max
—
—
—
–1
320
—
–1
–1
—
2SB858
Min
–70
–60
–5
—
60
35
—
—
—
Typ
—
—
—
—
—
—
—
—
15
Max
—
—
—
–1
320
—
–1
–1
—
V
V
MHz
Unit
V
V
V
µA
Test conditions
I
C
= –10
µA,
I
E
= 0
I
C
= –50 mA, R
BE
=
∞
I
E
= –10
µA,
I
C
= 0
V
CB
= –50 V, I
E
= 0
V
CE
=
–4 V
I
C
= –1 A*
2
I
C
= –0.1 A*
2
DC current transfer ratio h
FE1
*
1
h
FE2
Collector to emitter
saturation voltage
V
CE(sat)
I
C
= –2 A, I
B
= –0.2 A*
2
V
CE
= –4 V, I
C
= –1 A*
2
V
CE
= –4 V,
I
C
= –0.5 A*
2
Base to emitter voltage V
BE
Gain bandwidth product f
T
Notes: 1. The 2SB857 and 2SB858 are grouped by h
FE1
as follows.
2. Pulse test
B
60 to 120
C
100 to 200
D
160 to 320
Maximum Collector Dissipation Curve
60
Collector power dissipation Pc (W)
–5
Area of Safe Operation
(–10 V, –4 A)
D
I
C max
(Continuous)
C
O
–2
pe
ra
T
C
= 25°C
(–20 V, –2 A)
tio
n
–1.0
(–6
0V
40
Collector Current I
C
(A)
–0.5
(–50 V, –0.24 A)
–0.2
–0.1
–0.05
–1
, –0
.15
20
A)
2SB857
2SB858
–2
–5 –10 –20
–50 –100
Collector to emitter Voltage V
CE
(V)
0
50
100
Case Temperature T
C
(°C)
150
RENESAS [ RENESAS TECHNOLOGY CORP ]
