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2SB647 参数 Datasheet PDF下载

2SB647图片预览
型号: 2SB647
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延 [Silicon PNP Epitaxial]
分类和应用:
文件页数/大小: 8 页 / 49 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SB647, 2SB647A
Saturation Voltage
vs. Collector Current
Collector to emitter saturation voltage V
CE(sat)
(V)
Base to emitter saturation voltage V
BE(sat)
(V)
–0.6
–0.5
–0.4
–0.3
–0.2
–0.1
0
–1.2
–1.0
I
C
= 10 I
B
Pulse
–0.8 V
BE(sat)
Ta = –25
°
C
25
75
–0.6
–0.4
–0.2
0
–1
Ta = 75°C
25
–25
V
CE(sat)
–3
–10 –30 –100 –300 –1,000
Collector Current I
C
(mA)
Gain Bandwidth Product
vs. Collector Current
Collector output capacitance C
ob
(pF)
240
Gain bandwidth product f
T
(MHz)
200
160
120
80
40
0
–10
V
CE
= –5 V
200
100
50
Collector Output Capacitance vs.
Collector to Base Voltage
f = 1 MHz
I
E
= 0
20
10
5
–30
–100
–300
Collector Current I
C
(mA)
–1,000
2
–1
–2
–5 –10 –20
–50 –100
Collector to Base Voltage V
CB
(V)