欢迎访问ic37.com |
会员登录 免费注册
发布采购

2SB1391 参数 Datasheet PDF下载

2SB1391图片预览
型号: 2SB1391
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅三重扩散 [Silicon PNP Triple Diffused]
分类和应用: 晶体晶体管功率双极晶体管
文件页数/大小: 7 页 / 146 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
 浏览型号2SB1391的Datasheet PDF文件第1页浏览型号2SB1391的Datasheet PDF文件第2页浏览型号2SB1391的Datasheet PDF文件第3页浏览型号2SB1391的Datasheet PDF文件第5页浏览型号2SB1391的Datasheet PDF文件第6页浏览型号2SB1391的Datasheet PDF文件第7页  
2SB1391
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
P
C
P
C
*
1
Junction temperature
Storage temperature
Note:
1. Value at T
C
= 25°C.
Tj
Tstg
Ratings
–120
–120
–7
–8
–12
2
25
150
–55 to +150
°C
°C
Unit
V
V
V
A
A
W
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Symbol
V
(BR)CBO
Min
–120
–120
–7
1000
Typ
Max
–10
–10
20000
–1.5
–3.0
–2.0
–3.5
V
V
Unit
V
V
V
µA
Test conditions
I
C
= –0.1 mA, I
E
= 0
I
C
= –25 mA, R
BE
=
I
E
= –50 mA, I
C
= 0
V
CB
= –100 V, I
E
= 0
V
CE
= –100 V, R
BE
=
V
CE
= –3 V, I
C
= –4 A*
1
I
C
= –4 A, I
B
= –8 mA*
1
I
C
= –8 A, I
B
= –80 mA*
1
I
C
= –4 A, I
B
= –8 mA*
1
I
C
= –8 A, I
B
= –80 mA*
1
Collector to emitter breakdown V
(BR)CEO
voltage
Emitter to base breakdown
voltage
Collector cutoff current
V
(BR)EBO
I
CBO
I
CEO
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Note:
1. Pulse test.
h
FE
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
See switching characteristic curve of 2SB791(K).