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2SB1079 参数 Datasheet PDF下载

2SB1079图片预览
型号: 2SB1079
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅三重扩散 [Silicon PNP Triple Diffused]
分类和应用: 晶体晶体管放大器局域网
文件页数/大小: 7 页 / 146 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SB1079
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Note:
1. Value at T
C
= 25°C.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
I
B
P
C
*
1
Tj
Tstg
Ratings
–100
–100
–7
–20
–30
–3
100
150
–55 to +150
Unit
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Symbol
V
(BR)CBO
Min
–100
–100
–100
–7
1000
Typ
0.6
3.5
Max
–100
–1.0
20000
–2.0
–2.5
–3.0
–3.5
V
V
V
V
µs
µs
I
C
= –10 A, I
B1
= –I
B2
= –20 mA
I
C
= –20 A, I
B
= –200 mA*
1
Unit
V
V
V
V
µA
mA
Test conditions
I
C
= –0.1 mA, I
E
= 0
I
C
= –25 mA, R
BE
=
I
C
= –200 mA, R
BE
=
∞*
1
I
E
= –50 mA, I
C
= 0
V
CB
= –100 V, I
E
= 0
V
CE
= –80 V, R
BE
=
V
CE
= –3 V, I
C
= –10 A*
1
I
C
= –10 A, I
B
= –20 mA*
1
Collector to emitter breakdown V
(BRCEO
voltage
Collector to emitter sustain
voltage
Emitter to base breakdown
voltage
Collector cutoff current
V
CEO(sus)
V
(BR)EBO
I
CBO
I
CEO
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Turn on time
Storage time
Note:
1. Pulse Test.
h
FE
V
CE(sat)1
V
BE(sat)1
V
CE(sat)2
V
BE(sat)2
t
on
t
stg