欢迎访问ic37.com |
会员登录 免费注册
发布采购

2SA844 参数 Datasheet PDF下载

2SA844图片预览
型号: 2SA844
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延 [Silicon PNP Epitaxial]
分类和应用:
文件页数/大小: 5 页 / 156 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
 浏览型号2SA844的Datasheet PDF文件第1页浏览型号2SA844的Datasheet PDF文件第3页浏览型号2SA844的Datasheet PDF文件第4页浏览型号2SA844的Datasheet PDF文件第5页  
2SA844
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Collector to base breakdown voltage
V
(BR)CBO
Collector to emitter breakdown voltage
V
(BR)CEO
Emitter to base breakdown voltage
V
(BR)EBO
Collector cutoff current
I
CBO
Emitter cutoff current
I
EBO
DC current transfer ratio
h
FE
*
1
Collector to emitter saturation voltage
V
CE(sat)
Base to emitter voltage
V
BE
Gain bandwidth product
f
T
Collector output capacitance
Cob
Note: 1. The 2SA844 is grouped by h
FE
as follows.
C
D
160 to 320
250 to 500
Min
–55
–55
–5
160
Typ
–0.1
–0.66
200
2.0
Max
–100
–50
500
–0.5
–0.75
Unit
V
V
V
nA
nA
V
V
MHz
pF
Test conditions
I
C
= –10
µA,
I
E
= 0
I
C
= –1 mA, R
BE
=
I
E
= –10
µA,
I
C
= 0
V
CB
= –18 V, I
E
= 0
V
EB
= –2 V, I
C
= 0
V
CE
= –12 V, I
C
= –2 mA
I
C
= –10 mA, I
B
= –1 mA
V
CE
= –12 V, I
C
= –2 mA
V
CE
= –12 V, I
E
= –2 mA
V
CB
= –10 V, I
E
= 0, f = 1 MHz
Rev.2.00 Aug 10, 2005 page 2 of 4