6$
(/(&75,&$/ &+$5$&7(5,67,&6 7
A
Parameter
Collector to emitter voltage
Collector to emitter voltage
Symbol
V
CEO(SUS)
V
CEX(SUS)
°
Conditions
MIN.
−60
−60
−10
−1.0
−10
−1.0
−10
100
100
60
−0.3
−0.5
−1.2
−1.5
300
80
0.3
1.5
0.3
V
V
V
V
pF
MHz
400
TYP.
MAX.
Unit
V
V
I
C
=
−8.0
A, I
B
=
−0.8
A, L = 1 mH
I
C
=
−8.0
A, I
B1
=
−I
B2
=
−0.8
A,
V
BE(OFF)
= 1.5 V, L = 180
µ
H, clamped
V
CB
=
−60
V, I
E
= 0
V
CE
=
−60
V, R
BE
= 50
Ω,
T
A
= 125°C
V
CE
=
−60
V, V
BE(OFF)
= 1.5 V
V
CE
=
−60
V, V
BE(OFF)
= 1.5 V,
T
A
= 125°C
V
EB
=
−5.0
V, I
C
= 0
V
CE
=
−2.0
V, I
C
=
−1.5
A
V
CE
=
−2.0
V, I
C
=
−3.0
A
V
CE
=
−2.0
V, I
C
=
−8.0
A
I
C
=
−8.0
A, I
B
=
−0.4
A
I
C
=
−12
A, I
B
=
−0.6
A
I
C
=
−8.0
A, I
B
=
−0.4
A
I
C
=
−12
A, I
B
=
−0.6
A
V
CB
=
−10
V, I
E
= 0, f = 1.0 MHz
V
CE
=
−10
V, I
C
=
−1.5
A
I
C
=
−8.0
A, R
L
= 6.3
Ω,
I
B1
=
−I
B2
=
−0.4
A, V
CC
≅ −50
V
Refer to the test circuit.
Collector cutoff current
Collector cutoff current
Collector cutoff current
Collector cutoff current
I
CBO
I
CER
I
CEX1
I
CEX2
µ
A
mA
µ
A
mA
Emitter cutoff current
DC current gain
DC current gain
DC current gain
Collector saturation voltage
Collector saturation voltage
Base saturation voltage
Base saturation voltage
Collector capacitance
Gain bandwidth product
Turn-on time
Storage time
Fall time
I
EBO
h
FE1
*
h
FE2
*
h
FE3
*
V
CE(sat)1
*
V
CE(sat)2
*
V
BE(sat)1
*
V
BE(sat)2
*
C
ob
f
T
t
on
t
stg
t
f
µ
A
µ
s
µ
s
µ
s
3XOVH WHVW 3:
≤
µ
V GXW\ F\FOH
≤
K
FE
&/$66,),&$7,21
Marking
h
FE2
M
100 to 200
L
150 to 300
K
200 to 400
6:,7&+,1* 7,0( W
on
W
stg
W
f
%DVH FXUUHQW
ZDYHIRUP
&ROOHFWRU FXUUHQW
ZDYHIRUP
'DWD 6KHHW '(-9'6
RENESAS [ RENESAS TECHNOLOGY CORP ]
