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2SA1121SDTL-H 参数 Datasheet PDF下载

2SA1121SDTL-H图片预览
型号: 2SA1121SDTL-H
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延 [Silicon PNP Epitaxial]
分类和应用:
文件页数/大小: 6 页 / 92 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
 浏览型号2SA1121SDTL-H的Datasheet PDF文件第1页浏览型号2SA1121SDTL-H的Datasheet PDF文件第3页浏览型号2SA1121SDTL-H的Datasheet PDF文件第4页浏览型号2SA1121SDTL-H的Datasheet PDF文件第5页浏览型号2SA1121SDTL-H的Datasheet PDF文件第6页  
2SA1121  
Preliminary  
Electrical Characteristics  
(Ta = 25°C)  
Item  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Min  
–35  
–35  
–4  
Typ  
Max  
Unit  
V
Test conditions  
IC = –10 A, IE = 0  
Collector to base breakdown voltage  
Collector to emitter breakdown voltage  
Emitter to base breakdown voltage  
Collector cutoff current  
V
IC = –1 mA, RBE =   
IE = –10 A, IC = 0  
V
–0.5  
–0.6  
320  
A  
V
VCB = –20 V, IE = 0  
Collector to emitter saturation voltage  
DC current transfer ratio  
VCE(sat)  
–0.2  
IC = –150 mA, IB = –15 mA  
VCE = –3 V, IC = –10 mA  
1
hFE  
*
100  
10  
hFE  
VCE = –3 V, IC = –500 mA  
(Pulse test)  
Base to emitter voltage  
VBE  
–0.64  
V
VCE = –3 V, IC = –10 mA  
Note: 1. The 2SA1121 is grouped by hFE as follows.  
Grade  
Mark  
hFE  
C
SC  
D
SD  
100 to 200  
160 to 320  
R07DS0271EJ0300 Rev.3.00  
Mar 28, 2011  
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