2SA1069, 1069A
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
VCEO(SUS)
VCEX(SUS)1
Conditions
MIN.
TYP.
MAX.
Unit
V
Collector to emitter voltage
Collector to emitter voltage
IC = −3.0 V, IB1 = −0.3 A, L = 1 mH
−60/−80
−60/−80
IC = −3.0 A, IB1 = −IB2 = −0.3 A,
V
VBE(OFF) = 5.0 V, L = 180 μH, clamped
Collector to emitter voltage
VCEX(SUS)2
IC = −6.0 A, IB1 = −0.6 A, IB2 = 0.3 A,
VBE(OFF) = 5.0 V, L = 180 μH, clamped
−60/−80
V
Collector cutoff current
Collector cutoff current
Collector cutoff current
Collector cutoff current
ICBO
ICER
VCB = −60/−80 V, IE = 0 A
−10
−1.0
−10
μA
mA
μA
VCE = −60/−80 V, RBE = 51 Ω, TA = 125 °C
VCE = −60/−80 V, VBE(OFF) = 1.5 V
ICEX1
ICEX2
VCE = −60/−80 V, VBE(OFF) = 1.5 V,
TA = 125 °C
−1.0
mA
Emitter cutoff current
DC current gain
DC current gain
Collector saturation voltage
Base saturation voltage
Turn-on time
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
ton
VEB = −5.0 V, IC = 0 A
−10
μA
VCE = −5.0 V, IC = −0.3 ANote
VCE = −5.0 V, IC = −0.3 ANote
IC = −3.0 A, IB = −0.3 ANote
IC = −3.0 A, IB = −0.3 ANote
40
40
200
−0.6
−1.5
0.5
V
V
IC = −3.0 A, RL = 17 Ω,
IB1 = −IB2 = −0.3 A, VCC ≅ −50 V
Refer to the test circuit.
μs
μs
μs
Storage time
tstg
2.5
Fall time
tf
0.5
Note Pulse test PW ≤ 350 μs, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
hFE2
40 to 80
60 to 120
100 to 200
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
Base current
waveform
Collector current
waveform
2
Data Sheet D14855EJ3V1DS
RENESAS [ RENESAS TECHNOLOGY CORP ]
