DATA SHEET
SILICON POWER TRANSISTORS
2SA1069, 1069A
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
ORDERING INFORMATION
The 2SA1069/1069A are the mold power transistors developed for <R>
high-speed switching, and is ideal for use as a driver in devices such
as switching regulators, DC/DC converters, and high-frequency power
amplifiers.
Part No.
2SA1069
Package
TO-220AB
(MP-25)
2SA1069A
2SA1069-Z
2SA1069A-Z
TO-220SMD
(MP-25Z)
FEATURES
• Low collector saturation voltage
• Fast switching speed
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Symbol
VCBO
Conditions
Ratings
−80
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
VCEO
−60/−80
−12
V
VEBO
V
IC(DC)
−5.0
A
IC(pulse)
PW ≤ 300 μs,
−10
A
duty cycle ≤ 10%
<R>
(TO-220SMD)
Base current (DC)
IB(DC)
PT
−2.5
30
A
Total power dissipation
TC = 25°C
TA = 25°C
W
W
°C
°C
1.5
Junction temperature
Storage temperature
Tj
150
Tstg
−55 to +150
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14855EJ3V1DS00 (3rd edition)
Date Published January 2010 N
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an ‘‘<R>"
in the PDF file and specifying it in the ‘‘Find what:’’ field.
2002
RENESAS [ RENESAS TECHNOLOGY CORP ]
