2SA1084, 2SA1085
Electrical Characteristics
(Ta = 25°C)
2SA1084
Typ
2SA1085
Typ
Item
Symbol
Min
Max
Min
Max
Unit
Test conditions
Collector to base
V(BR)CBO
–90
—
—
–120
—
—
V
IC = –10 µA, IE = 0
breakdown voltage
Collector to emitter
breakdown voltage
V(BR)CEO
V(BR)EBO
ICBO
–90
–5
—
—
—
—
–120
–5
—
—
—
—
V
V
IC = –1 mA,
RBE = ∞
Emitter to base
breakdown voltage
IE = –10 µA, IC = 0
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
—
—
—
—
—
–0.1
–0.1
800
—
—
—
—
—
–0.1
–0.1
800
µA VCB = –50 V, IE = 0
µA VEB = –2 V, IC = 0
IEBO
1
hFE
*
250
250
VCE = –12 V,
IC = –2 mA
Collector to emitter
saturation voltage
VCE(sat)
VBE
fT
—
—
—
—
—
—
–0.6
90
–0.2
—
—
—
—
—
—
—
–0.6
90
–0.2
—
V
V
IC = –10 mA,
IB = –1 mA
Base to emitter voltage
VCE = –12 V,
IC = –2 mA
Gain bandwidth product
—
—
MHz VCE = –12 V,
IC = –2 mA
Collector output
capacitance
Cob
en
3.5
0.5
—
3.5
0.5
—
pF VCB = –10 V, IE = 0,
f = 1 MHz
Noise voltage referred to
input
—
—
nV/ VCE = –6V,
√Hz IC = –10 mA,
f = 1 kHz,
Rg = 0, ∆f = 1Hz
Note: 1. The 2SA1084 and 2SA1085 are grouped by hFE as follows.
D
E
250 to 500
400 to 800
Rev.3.00 Aug 10, 2005 page 2 of 5
RENESAS [ RENESAS TECHNOLOGY CORP ]
