2SA1025, 2SA1081, 2SA1082
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
IC
2SA1025
–60
2SA1081
–90
2SA1082
–120
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
–60
–90
–120
V
–5
–5
–5
V
–100
100
–100
100
–100
mA
mA
mW
°C
°C
Emitter current
IE
100
Collector power dissipation
Junction temperature
Storage temperature
PC
400
400
400
Tj
150
150
150
Tstg
–55 to +150
–55 to +150
–55 to +150
Electrical Characteristics (Ta = 25°C)
2SA1025
2SA1081
2SA1082
Item
Symbol Min Typ Max Min Typ Max Min Typ Max Unit Test conditions
Collector to base
V(BR)CBO –60
V(BR)CEO –60
V(BR)EBO –5
—
—
—
—
—
—
–90
–90
–5
—
—
—
—
—
—
–120 —
—
—
—
V
IC = –10 µA, IE = 0
breakdown voltage
Collector to emitter
breakdown voltage
–120 —
V
IC = –1 mA,
RBE = ∞
Emitter to base
–5
—
µA
IE = –10 µA, IC = 0
breakdown voltage
Collector cutoff current ICBO
Emitter cutoff current IEBO
DC current transfer ratio hFE
—
—
—
—
–0.1
–0.1
—
—
—
—
—
–0.1
–0.1
800
—
—
—
—
–0.1 µA
–0.1
VCB = –50 V, IE = 0
VEB = –2 V, IC = 0
—
—
1
*
250
800 250
250
800
VCE = –12 V,
IC = –2 mA
Collector to emitter
saturation voltage
VCE(sat)
—
—
—
—
—
–0.2
—
—
—
—
—
—
–0.2
—
—
—
—
—
—
–0.2
—
V
V
IC = –10 mA,
IB = –1 mA
Base to emitter voltage VBE
–0.6
90
–0.6
90
–0.6
90
VCE = –12 V,
IC = –2 mA
Gain bandwidth product fT
—
—
—
MHz VCE = –12 V,
IC = –2 mA
Collector output
capacitance
Cob
3.5
—
3.5
—
3.5
—
pF
VCB = –10 V, IE = 0,
f = 1 MHz
Note: 1. The 2SA1025, 2SA1081 and 2SA1082 are grouped by hFE as follows.
D
E
250 to 500
400 to 800
See characteristic curves of 2SA1083.
RENESAS [ RENESAS TECHNOLOGY CORP ]
