2S2M, 2S4M
ELECTRICAL CHARACTERISTICS (Tj = 25°C, RGK = 1 kΩ)
Parameter
Symbol
Conditions
Specifications
Unit
Remarks
MIN.
TYP.
MAX.
10
Tj = 25°C
µA
−
Repeat peak off-state
current
IDRM
VDM = VDRM
Tj = 125°C
Tj = 25°C
Tj = 125°C
−
200
10
µA
V
−
Repetitive peak reverse
current
IRRM
VRM = VRRM
200
2.2
0.8
300
−
Refer to Figure 1.
−
−
−
−
−
−
−
On voltage
VTM
VGT
IGT
V
Refer to Figure 9.
Tj = 25°C, ITM = 4 A
VDM = 6 V, RL = 100 Ω
µA
V
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Refer to Figure 8.
VDM = 6 V, RL = 100 Ω
Tj = 125°C, VDM = 21 VDRM
−
−
−
−
VGD
dV/dt
0.2
10
V
Tj = 125°C, VDM = 32 VDRM
−
V/µs
Critical rate of-rise of off-
state voltage
Tj = 25°C, VD = 24 V
−
−
−
−
Holding current
IH
10
15
mA
µs
Commutating turn-off time
Tq
Tj = 125°C, IT = 2 A
VDM = 32 VDRM, VR = 50 V
dV/dt = 10 V/µs
Tj = 125°C, VDM = 32 VDRM
−
−
µs
−
Turn-on time
Tgt
2
ITM = 30 A
IG = 5 mA, t1G = 5 µs
−
−
−
−
°C/W
Thermal resistance
Rth(j-c)
Junction-to-case DC
10
75
Refer to Figure 13.
Rth(j-a)
Junction-to-ambient DC
TYPICAL CHARACTERISTICS (Ta = 25°C)
2
Data Sheet D13535EJ2V0DS
RENESAS [ RENESAS TECHNOLOGY CORP ]
