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1SS88TDX 参数 Datasheet PDF下载

1SS88TDX图片预览
型号: 1SS88TDX
PDF下载: 下载PDF文件 查看货源
内容描述: [SILICON, MIXER DIODE, DO-35]
分类和应用: 肖特基二极管微波混频二极管有线电视
文件页数/大小: 5 页 / 66 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
 浏览型号1SS88TDX的Datasheet PDF文件第1页浏览型号1SS88TDX的Datasheet PDF文件第3页浏览型号1SS88TDX的Datasheet PDF文件第4页浏览型号1SS88TDX的Datasheet PDF文件第5页  
1SS88  
Absolute Maximum Ratings  
(Ta = 25°C)  
Unit  
Item  
Reverse voltage  
Symbol  
Value  
VR  
IFM  
IO  
10  
35  
V
Peak forward current  
Average rectified current  
Power dissipation  
mA  
mA  
mW  
°C  
15  
Pd  
Tj  
150  
Junction temperature  
Storage temperature  
100  
Tstg  
55 to +100  
°C  
Electrical Characteristics  
(Ta = 25°C)  
Test Condition  
Item  
Symbol  
VF1  
VF2  
IR1  
Min  
Typ  
Max  
430  
600  
0.2  
10  
Unit  
Forward voltage  
365  
520  
mV  
IF = 1 mA  
IF = 10 mA  
VR = 2 V  
Reverse current  
µA  
IR2  
VR = 10 V  
Capacitance  
Capacitance deviation *3  
Forward voltage deviation *3 VF1  
C
0.97  
0.1  
10  
pF  
pF  
VR = 0 V, f = 1 MHz  
VR = 0 V, f = 1 MHz  
IF = 2.5 mA  
C  
mV  
VF2  
10  
IF = 10 mA  
ESD-Capability *1  
30  
V
C = 200 pF, R = 0 , Both forward  
and reverse direction 1 pulse.  
Notes: 1. Failure criterion ; IR 50 µA at VR = 10 V  
2. Each group shall unify a multiple of 4 diodes.  
3. Not applied to taping-type products.  
REJ03G0615-0300 Rev.3.00 May 24, 2007  
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