欢迎访问ic37.com |
会员登录 免费注册
发布采购

1SS286TD-E 参数 Datasheet PDF下载

1SS286TD-E图片预览
型号: 1SS286TD-E
PDF下载: 下载PDF文件 查看货源
内容描述: [SILICON, MIXER DIODE, DO-34]
分类和应用: 肖特基二极管微波混频二极管开关
文件页数/大小: 5 页 / 65 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
 浏览型号1SS286TD-E的Datasheet PDF文件第1页浏览型号1SS286TD-E的Datasheet PDF文件第3页浏览型号1SS286TD-E的Datasheet PDF文件第4页浏览型号1SS286TD-E的Datasheet PDF文件第5页  
1SS286  
Absolute Maximum Ratings  
(Ta = 25°C)  
Unit  
Item  
Reverse voltage  
Symbol  
Value  
25  
VR  
IF  
V
mA  
mW  
°C  
Forward current  
35  
Power dissipation  
Junction temperature  
Storage temperature  
Pd  
Tj  
150  
100  
Tstg  
55 to +100  
°C  
Electrical Characteristics  
(Ta = 25°C)  
Test Condition  
Item  
Forward voltage  
Reverse voltage  
Reverse current  
Capacitance  
Symbol  
Min  
Typ  
Max  
0.60  
Unit  
VF  
VR  
IR  
25  
10  
V
V
IF = 10 mA  
IF = 10 µA  
VR = 10 V  
10  
nA  
pF  
pF  
mV  
V
C
1.20  
0.10  
10  
VR = 0 V, f = 1 MHz  
VR = 0 V, f = 1 MHz  
IF = 10mA  
Capacitance deviation *3  
C  
Forward voltage deviation *3 VF  
ESD-Capability *1  
C = 200 pF, R = 0 , Both forward  
and reverse direction 1 pulse.  
Notes: 1. Failure criterion ; IR 20 nA at VR = 10 V  
2. Each group shall unify a multiple of 4 diodes  
3. Not applied to taping-type products.  
REJ03G0142-0300 Rev.3.00 May 24, 2007  
Page 2 of 4