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1S2075K 参数 Datasheet PDF下载

1S2075K图片预览
型号: 1S2075K
PDF下载: 下载PDF文件 查看货源
内容描述: 硅外延平面二极管,高速开关 [Silicon Epitaxial Planar Diode for High Speed Switching]
分类和应用: 整流二极管开关
文件页数/大小: 5 页 / 144 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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1S2075(K)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Peak reverse voltage
Reverse voltage
Peak forward current
Non-Repetitive peak forward surge current
Average rectified current
Power dissipation
Junction temperature
Storage temperature
Note: Within 1s forward surge current.
Symbol
V
RM
V
R
I
FM
I
FSM
*
I
O
Pd
Tj
Tstg
Value
35
30
450
600
100
250
175
−65
to +175
Unit
V
V
mA
mA
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Forward voltage
Reverse current
Capacitance
Reverse recovery time
Symbol
V
F
I
R
C
t
rr
*
Min
Typ
Max
0.8
100
3.5
8.0
Unit
V
nA
pF
ns
Test Condition
I
F
= 10 mA
V
R
= 30 V
V
R
= 1 V, f = 1 MHz
I
F
= I
R
= 10 mA, Irr = 1 mA
Note: Reverse recovery time test circuit
DC
Supply
0.1
µF
Pulse
Ro = 50
Generator
Trigger
3 kΩ
Sampling
Oscilloscope Rin = 50
Rev.4.00 Mar 16, 2005 page 2 of 4