欢迎访问ic37.com |
会员登录 免费注册
发布采购

1S2075 参数 Datasheet PDF下载

1S2075图片预览
型号: 1S2075
PDF下载: 下载PDF文件 查看货源
内容描述: 硅外延平面二极管,高速开关 [Silicon Epitaxial Planar Diode for High Speed Switching]
分类和应用: 二极管开关
文件页数/大小: 5 页 / 144 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
 浏览型号1S2075的Datasheet PDF文件第1页浏览型号1S2075的Datasheet PDF文件第3页浏览型号1S2075的Datasheet PDF文件第4页浏览型号1S2075的Datasheet PDF文件第5页  
1S2075(K)  
Absolute Maximum Ratings  
(Ta = 25°C)  
Unit  
V
Item  
Peak reverse voltage  
Reverse voltage  
Symbol  
Value  
35  
30  
VRM  
VR  
V
Peak forward current  
Non-Repetitive peak forward surge current IFSM  
Average rectified current  
Power dissipation  
Junction temperature  
IFM  
450  
600  
100  
250  
mA  
mA  
mA  
mW  
°C  
*
IO  
Pd  
Tj  
175  
Storage temperature  
Tstg  
65 to +175  
°C  
Note: Within 1s forward surge current.  
Electrical Characteristics  
(Ta = 25°C)  
Test Condition  
IF = 10 mA  
VR = 30 V  
VR = 1 V, f = 1 MHz  
IF = IR = 10 mA, Irr = 1 mA  
Item  
Symbol  
VF  
IR  
C
Min  
Typ  
Max  
0.8  
100  
3.5  
Unit  
V
nA  
pF  
ns  
Forward voltage  
Reverse current  
Capacitance  
Reverse recovery time  
trr *  
8.0  
Note: Reverse recovery time test circuit  
DC  
Supply  
3 k  
0.1 µF  
Pulse  
Generator  
Sampling  
Oscilloscope  
Ro = 50 Ω  
Rin = 50 Ω  
Trigger  
Rev.4.00 Mar 16, 2005 page 2 of 4