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1N5229B 参数 Datasheet PDF下载

1N5229B图片预览
型号: 1N5229B
PDF下载: 下载PDF文件 查看货源
内容描述: 硅外延平面稳压二极管的稳压 [Silicon Epitaxial Planar Zener Diodes for Voltage Regulation]
分类和应用: 稳压二极管测试
文件页数/大小: 6 页 / 166 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
 浏览型号1N5229B的Datasheet PDF文件第1页浏览型号1N5229B的Datasheet PDF文件第3页浏览型号1N5229B的Datasheet PDF文件第4页浏览型号1N5229B的Datasheet PDF文件第5页浏览型号1N5229B的Datasheet PDF文件第6页  
1N5223B through 1N5258B
Absolute Maximum Ratings
(Ta = 25°C)
Item
Power dissipation
Surge power dissipation
Lead temperature
Junction temperature
Storage temperature
Symbol
Pd
Pd (surge) *
2
T
L
*
Tj *
Tstg
3
1
Ratings
500
10
230
200
–65 to +200
Unit
mW
W
°C
°C
°C
Notes: 1. Non-recurrent square wave, pw = 8.3 ms, Tj = 55°C, Tj is prior to surge.
2. Less than 1/16" from the case for 10 seconds.
3. By standard printed board, see fig 2.
Electrical Characteristics
(Ta = 25°C)
Zener Voltage
Test
Condition
Type No.
1N5223B
1N5224B
1N5225B
1N5226B
1N5227B
1N5228B
1N5229B
1N5230B
1N5231B
1N5232B
1N5233B
1N5234B
1N5235B
1N5236B
1N5237B
1N5238B
1N5239B
1N5240B
1N5241B
1N5242B
1N5243B
1N5244B
1N5245B
1N5246B
1N5247B
1N5248B
1N5249B
1N5250B
V
Z
(V)
2.7 ± 5 (%)
2.8 ± 5 (%)
3.0 ± 5 (%)
3.3 ± 5 (%)
3.6 ± 5 (%)
3.9 ± 5 (%)
4.3 ± 5 (%)
4.7 ± 5 (%)
5.1 ± 5 (%)
5.6 ± 5 (%)
6.0 ± 5 (%)
6.2 ± 5 (%)
6.8 ± 5 (%)
7.5 ± 5 (%)
8.2 ± 5 (%)
8.7 ± 5 (%)
9.1 ± 5 (%)
10 ± 5 (%)
11 ± 5 (%)
12 ± 5 (%)
13 ± 5 (%)
14 ± 5 (%)
15 ± 5 (%)
16 ± 5 (%)
17 ± 5 (%)
18 ± 5 (%)
19 ± 5 (%)
20 ± 5 (%)
I
Z
(mA)
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
9.0
8.5
7.8
7.4
7.0
6.6
6.2
Reverse Current
I
R
(µA)
Max
75
75
50
25
15
10
5
5
5
5
5
5
3
3
3
3
3
3
2
1
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
Test
Condition
V
R
(V)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
3.0
3.5
4.0
5.0
6.0
6.5
6.5
7.5
8.0
8.4
9.1
9.9
10
11
12
13
14
14
15
Z
ZT
(Ω)
Max
30
30
29
28
24
23
22
19
17
11
7
7
5
6
8
8
10
17
22
30
13
15
16
17
19
21
23
25
Dynamic Resistance
Test
Condition
I
ZT
(mA)
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
9.0
8.5
7.8
7.4
7.0
6.6
6.2
Z
ZK
(Ω)
Max
1300
1400
1600
1600
1700
1900
2000
1900
1600
1600
1600
1000
750
500
500
600
600
600
600
600
600
600
600
600
600
600
600
600
Test
Condition
I
ZK
(mA)
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
γ
Z
(%/°C) *
1
Max
–0.08
–0.08
–0.075
–0.07
–0.065
–0.06
±0.055
±0.03
±0.03
+0.038
+0.038
+0.045
+0.05
+0.058
+0.062
+0.065
+0.068
+0.075
+0.076
+0.077
+0.079
+0.082
+0.082
+0.083
+0.084
+0.085
+0.086
+0.086
V
F
*
2
(V)
Max
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
Notes: 1. 1N5223 to 1N5242: I
Z
= 7.5 mA, 1N5243 to 1N5258: I
Z
= I
Z,
, Ta = 25°C to 125°C
2. Tested with DC, I
F
= 200 mA
Rev.3.00 Aug 22, 2005 page 2 of 5