ELECTRICAL CHARACTERISTICS
(@TA=25
O
C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (I C = 1mAdc, I B = 0)
Collector-Base Breakdown Voltage (I C = 10uAdc, I E = 0)
Emitter-Base Breakdown Voltage (I E = 100uAdc, I C = 0)
Base Cutoff Current (V CE = 30Vdc, V EB = 3.0Vdc)
Collector Cutoff Current (V CE = 30Vdc, V EB = 3.0Vdc)
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
40
60
6.0
-
-
-
-
-
50
50
Vdc
Vdc
Vdc
nAdc
nAdc
Symbol
Min
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain (I C = 0.1mAdc, V CE = 1.0Vdc)
(I C = 1.0mAdc, V CE = 1.0Vdc)
(I C = 10mAdc, V CE = 1.0Vdc)
(I C = 50mAdc, V CE = 1.0Vdc)
(I C = 100mAdc, V CE = 1.0Vdc)
Collector-Emitter Saturation Voltage (I C = 10mAdc, I B = 1.0mAdc)
(I C = 50mAdc, I B = 5.0mAdc)
Base-Emitter Saturation Voltage (I C = 10mAdc, I B = 1.0mAdc)
(I C = 50mAdc, I B = 5.0mAdc)
VCE(sat)
hFE
40
70
100
60
30
-
-
0.65
-
-
-
300
-
-
0.2
0.3
0.85
0.95
Vdc
-
VBE(sat)
Vdc
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (I C = 10mAdc, V CE = 20Vdc, f= 100MHz)
Output Capacitance (V CB = 5.0Vdc, I E = 0, f= 1.0MHz)
Input Capacitance (V EB = 0.5Vdc, I C = 0, f= 1.0MHz)
Input lmpedance (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz)
Voltage Feedback Ratio (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz)
Small-Signal Current Gain (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz)
Output Admittance (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz)
Noise Figure (V CE = 5.0Vdc, I C = 100uAdc, R S = 1.0kohms, f= 1.0kHz)
fT
Cobo
Cibo
hie
hre
hfe
hoe
NF
300
-
-
1.0
0.5
100
1.0
-
-
4.0
8.0
10
8.0
400
40
5.0
MHz
pF
pF
kohms
X 10 -
4
-
umhos
dB
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(V CC = 3.0Vdc, V BE = -0.5Vdc, I C = 10mAdc, I B1 = 1.0mAdc)
td
tr
ts
tf
-
-
-
-
35
35
200
50
ns
ns
(V CC = 3.0Vdc, I C = 10mAdc, I B1 = I B2 = 1.0mAdc)
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Note : Pulse Test: Pulse Width-300ms,Duty Cycle-2.0%
RECTRON [ RECTRON SEMICONDUCTOR ]
