ELECTRICAL CHARACTERISTICS
(@TA=25
O
C unless otherwise noted)
Chatacteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (I C = 10mAdc, I B = 0)
Collector-Base Breakdown Voltage (I C = 10mAdc, I E = 0)
Emitter-Base Breakdown Voltage (I E = 10mAdc, I C = 0)
Collector Cutoff Current (V CE = 60Vdc,V EB(off) = 3.0Vdc
Collector Cutoff Current (V CB = 60Vdc, I E = 0)
(V CB = 60Vdc, I E = 0, TA= 125 C)
Emitter Cutoff Current (V EB = 3.0Vdc, I C = 0)
Base Cutoff Current (V CE = 60Vdc, V EB(off) = 3.0Vdc
O
Symbol
Min
Max
Unit
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEX
ICBO
IEBO
IBL
40
75
6.0
-
-
-
-
-
-
-
-
0.1
0.01
10
0.1
20
Vdc
Vdc
Vdc
uAdc
uAdc
uAdc
nAdc
ON CHARACTERISTICS
DC Current Gain (I C = 10mAdc, V CE = 10Vdc, TA= -55 C)
(I C = 500mAdc, V CE = 10Vdc) (1)
Collector-Emitter Saturation Voltage (1) (I C = 150mAdc, I B = 15mAdc)
(I C = 500mAdc, I B = 50mAdc)
Base-Emitter Saturation Voltage (1) (I C = 150mAdc, I B = 15mAdc)
(I C = 500mAdc, I B = 50mAdc)
O
hFE
35
40
-
-
0.6
-
-
-
0.3
1.0
1.2
2.0
-
VCE(sat)
Vdc
VBE(sat)
Vdc
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (2) (I C = 20mAdc, V CE = 20Vdc, f= 100MHz)
Input Capacitance (V EB =0.5Vdc, I C = 0, f= 1.0MHz)
Input Impedance (I C = 1.0mAdc, V CE =10Vdc, f=1.0kHz)
(I C = 10mAdc, V CE =10Vdc, f=1.0kHz)
Voltage Feedback Ratio (I C = 1.0mAdc, V CE = 10Vdc, f= 1.0kHz)
(I C = 10mAdc, V CE =10Vdc, f= 1.0kHz)
Small-Signal Current Gain (I C = 1.0mAdc, V CE = 10Vdc, f= 1.0kHz)
(I C = 10mAdc, V CE = 10Vdc, f= 1.0kHz)
Output Admittance (I C = 1.0mAdc, V CE = 10Vdc, f= 1.0kHz)
(I C = 10mAdc, V CE = 10Vdc, f= 1.0kHz)
Collector Base Time Constant (I E = 20mAdc, V CB = 20Vdc, f= 31.8MHz)
Noise Figure (I C = 100mAdc, V CE = 10Vdc, R S = 1.0kW, f= 1.0kHz)
fT
Cibo
hie
300
-
2.0
0.25
-
-
50
75
5.0
25
-
-
-
25
8.0
1.25
8.0
4.0
300
375
35
200
150
4.0
MHz
pF
kW
hre
X 10 -
4
hfe
-
hoe
rb,Cc
NF
umhos
ps
dB
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(V CC = 30Vdc, V BE(off) = -0.5Vdc, I C = 150mAdc, I B1 = 15mAdc)
td
tr
ts
tf
-
-
-
-
10
25
225
60
ns
ns
(V CC = 30Vdc, I C = 150mAdc, I B1 = I B2 = 15mAdc)
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NOTES : 1. Pulse Test: Pulse Width-300ms,Duty Cycle<2.0%
-
2. f
T
is defined as the frequency at which |hfe| extrapolates to unity
RECTRON [ RECTRON SEMICONDUCTOR ]
