RECTRON
TECHNICAL SPECIFICATION
SEMICONDUCTOR
CMPSH-3S
SOT-23 PLASTIC-ENCAPSULATE
SCHOTTKY DIODE
FEATURES
* Power dissipation
PD:
350
100
30
mW (Tamb=25OC)
Forward current
IF:
Reverse voltage
*
*
*
mA
V :
V
R
SOT-23
Operating and storage junction temperature range
T ,Tstg: -55OC to +150OC
J
MECHANICAL DATA
* Case: Molded plastic
0.055(1.40)
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
0.047(1.20)
0.006(0.15)
0.003(0.08)
0.043(1.10)
0.035(0.90)
* Weight: 0.008 gram
0.020(0.50)
0.012(0.30)
0.004(0.10)
0.000(0.00)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
1
2
0.019(2.00)
0.071(1.80)
0.118(3.00)
0.110(2.80)
3
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS
Reverse Breakdown Voltage (I =100µA)
SYMBOL
V(BR)
MIN
30
-
TYP
-
MAX
-
UNITS
V
R
-
500
100
nA
µA
Reverse voltage leakage current (V =25V)
R
IR
Reverse voltage leakage current (V =25V, T = 100oC)
-
-
-
-
R
A
Forward voltage (I =2mA)
F
-
-
0.33
0.45
1
V
Forward voltage (I =15mA)
F
VF
V
V
-
-
-
Forward voltage (I =100mA)
F
-
-
Diode capacitance (V =0V, f=1MHz)
Ctot
8
pF
ns
R
Reverse recovery time (I =I =10mA, I =1.0mA, R =100Ω)
-
t
5
F
R
RR
L
rr
Marking
DA5
2006-3
Note 1: "Fully ROHS compliant", "100% Sn plating (Pb-free)".
RECTRON [ RECTRON SEMICONDUCTOR ]
