欢迎访问ic37.com |
会员登录 免费注册
发布采购

BC817-40LT1 参数 Datasheet PDF下载

BC817-40LT1图片预览
型号: BC817-40LT1
PDF下载: 下载PDF文件 查看货源
内容描述: [Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3]
分类和应用:
文件页数/大小: 4 页 / 233 K
品牌: RECTRON [ RECTRON SEMICONDUCTOR ]
 浏览型号BC817-40LT1的Datasheet PDF文件第2页浏览型号BC817-40LT1的Datasheet PDF文件第3页浏览型号BC817-40LT1的Datasheet PDF文件第4页  
BC817-16LT1
BC817-25LT1
BC817-40LT1
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR (NPN)
FEATURES
* For general AF applications
* High collector current
* High current gain
* Low collector-emitter saturation voltage
SOT-23
COLLECTOR
3
MECHANICAL DATA
*
*
*
*
*
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.008 gram
BASE
1
2
0.055(1.40)
0.047(1.20)
EMITTER
0.006(0.15)
0.003(0.08)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
1
0.100(2.55)
0.089(2.25)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
O
0.019(2.00)
0.071(1.80)
3
2
0.118(3.00)
0.110(2.80)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
( @ T
A
= 25 C unless otherwise noted )
CHARACTERISTICS
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current-continuous
Collector dissipation
Junction and storage temperature
o
o
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J,
T
stg
VALUE
50
45
5
0.5
0.3
-55 -150
UNITS
V
V
V
A
W
o
C
ELECTRICAL CHARACTERISTICS
( @ T
A
= 25 C unless otherwise noted )
CHARACTERISTICS
Collector-base breakdown voltage (I
C
= 10µA, I
E
=0)
Collector-emitter breakdown voltage (I
C
= 10mA, I
B
=0)
Emitter-base breakdown voltage (I
E
= 1µA, I
C
=0)
Collector cut-off current (V
CB
= 45V, I
E
=0)
Emitter cut-off current (V
EB
= 4V, I
C
=0)
DC current gain (V
CE
= 1V, I
C
= 100mA)
Collector-emitter saturation voltage (I
C
= 500mA, I
B
= 50mA)
Base-emitter saturation voltage (I
C
= 500mA, I
B
= 50mA)
Base-emitter voltage (V
CE
= 1V, I
C
= 500mA)
Collector capactiance (V
CB
=10V, f = 1MHz)
Transition frequency (V
CE
= 5V, I
C
= 10mA, f= 100MH
Z
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE(1)
V
CE(sat)
V
BE(sat)
V
BE(ON)
100
16LT1
25LT1
MIN.
50
45
5
-
-
160
-
-
-
10
100
-
250
250
40LT1
16LT1
25LT1
MAX.
-
-
-
0.1
0.1
400
0.7
1.2
1.2
600
V
V
V
µA
µA
-
V
V
V
pF
MH
Z
40LT1
UNITS
Cob
f
T
25LT1--6B;
MARKING:
16LT1--6A;
40LT1--6C
2007-3