RATING AND CHARACTERISTICS CURVES ( BC807-40 )
400
1000
See Note 1
TA=25 C
f=20MH
Z
O
300
f
T
, GAIN BANDWIDTH PRODUCT(MH
Z
)
P
d
, POWER DISSIPATION (mW)
-V
CE
=5.0V
200
100
1.0V
100
0
0
100
T
SB,
SUBSTRATE TEMPERATURE( C)
O
200
10
1
10
100
1000
-V
CESAT
, COLLECTOR SATURATION VOLTAGE (V)
Figure.1 Power Derating Curve
0.5
0.4
0.3
0.2
0.1
0
150 C
O
Typical
limits
O
at T
A
=25 C
-I
C
/ - I
B
= 10
1000
Figure.2 GAIN-BANDWIDTH PRODUCT vs
COLLECTOR CURRENT
-V
CE
= 1V
150 C
25 C
-50 C
O
O
O
-I
C
, COLLECTOR CURRENT (mA)
h
FE
, DC CURRENT GAIN
-50 C
O
100
25 C
O
0.1
Figure.3 Collector Sat Voltage vs Collector Current
500
3.2
2.8
-Ic,COLLECTOR CURRENT(mA)
1
10
100
1000
10
0.1
1
-Ic, COLLECTOR CURRENT (mA)
10
100
1000
Figure.4 DC Current Gain vs Collector Current
100
0.35
-Ic, COLLECTOR CURRENT (mA)
-Ic, COLLECTOR CURRENT (mA)
2.4
2
1.8
1.6
1.4
1.2
0.8
0.6
400
80
0.3
0.25
300
60
0.2
0.15
0.1
200
40
100
0.4
20
0
-I
B
= 0.05mA
0
-I
B
= 0.2mA
0
1
-V
CE
, COLLECTOR - EMITTER VOLTAGE (V)
2
0
Figure.5 Typical Emitter-Collector Characteristics
Figure.6 Typical Emitter-Collector Characteristics
-V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
10
20
RECTRON [ RECTRON SEMICONDUCTOR ]
