BAV99W
SOT-323 SWITCHING DIODE
FEATURES
* Power dissipation
P
D
:
200 mW (Tamb=25
O
C)
* Forward current
I
F
:
150 mA
* Reverse voltage
V
R
: 75 V
* Operating and storage junction temperature range
T
J
,T
stg
: -65
O
C to +150
O
C
SOT-323
MECHANICAL DATA
*
*
*
*
*
*
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.006 gram
Marking: KJG
0.053(1.35)
0.045(1.15)
0.006(0.15)
0.003(0.08)
REF 0.021(0.53)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.016(0.40)
0.008(0.20)
1
0.096(2.45)
0.085(2.15)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
3
0.055(1.40)
0.047(1.20)
2
3
0.087(2.20)
0.079(2.00)
1
o
2
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
( @ T
A
= 25 C unless otherwise noted )
PARAMETER
Reverse Voltage
Forward current
Forward power dissipation
Junction Temperature
Storage Temperature
o
SYMBOL
V
R
I
O
P
D
T
J
T
STG
LIMITS
75
150
200
150
-65 to +150
UNITS
V
mA
mW
O
C
C
O
ELECTRICAL CHARACTERISTICS
( @ T
A
= 25 C unless otherwise noted )
CHARACTERISTICS
Reverse Breakdown Voltage (I
R
=100uA)
Reverse voltage leakage current (V
R
=75V)
(V
R
=20V)
(I
F
=1mA)
Forward voltage
(I
F
=10mA)
(I
F
=50mA)
(I
F
=150mA)
Diode capacitance (V
R
=0V,f=1MHz)
Reverse recovery time (I
F
=I
R
=10mA, I
RR
=0.1XI
RR
, R
L
=100W)
Note : "Fully RoHS Compliant", "100% Sn plating (Pb-free)".
C
D
trr
-
-
-
-
V
F
-
-
SYMBOL
V
(BR)
I
R
MIN.
75
-
TYP.
-
-
MAX.
-
2.5
25
715
855
1000
1250
2
4
pF
ns
VC 2007-08
mV
UNITS
V
uA
nA
RECTRON [ RECTRON SEMICONDUCTOR ]
