RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
BAT54CW
SOT-323 SURFACE MOUNT SCHOTTKY
BARRIER DIODE
FEATURES
* Low forward voltage drop
* Fast switching
* Uitra - small surface mount package
* PN Junction guard ring for transient and ESD protection
Marking: KL7
SOT-323
MECHANICAL DATA
*
*
*
*
*
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.006 gram
0.006(0.15)
0.003(0.08)
0.053(1.35)
0.045(1.15)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
REF 0.021(0.53)
0.016(0.40)
0.008(0.20)
0.096(2.45)
0.085(2.15)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
o
0.055(1.40)
0.047(1.20)
0.087(2.20)
0.079(2.00)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
( @ T
A
= 25 C unless otherwise noted )
CHARACTERISTICS
Peak repetitive reverse voltage
working peak reverse voltage
DC blocking voltage
Forward contiunous current (Note 1)
Repetitive peak forward current (Note 1)
Forward surge current (Note 1)
Power dissipation (Note 1)
Thermal resistance, Junction to ambient air (Note 1)
Operating and storage temperature range
o
o
SYMBOL
V
RRM
VALUE
30
30
30
200
300
600
200
625
-65~+125
UNITS
V
RWM
V
R
I
F
I
FRM
@ t < 1.0 s
V
µA
µA
µA
µW
Κ/Ω
o
I
FSM
P
D
R
θJA
Tj, Tstg
C
ELECTRICAL CHARACTERISTICS
( @ T
A
= 25 C unless otherwise noted )
CHARACTERISTICS
Reveres breakdown voltage (I
RS
= 100µA)
(I
F
= 0.1mA)
(I
F
= 1mA)
Forward voltage (Note 2)
(I
F
= 10mA)
(I
F
= 30mA)
(I
F
= 100mA)
Reverse leakage current (V
R
= 25V) (Note 2)
Junction capacitance (V
R
= 1.0V, f= 1.0MHz)
Reveres recovery time (I
F
=10mA through I
R
=10mA to I
R
=1.0mA,R
L
=100Ω)
Notes:
1. Valid provided that terminals are kept at ambient temperature.
2. tp <300µs, duty cycle <2%.
DS30065 Rev. 2P-1
SYMBOL
V
(BR)R
MIN
30
-
-
TYP
-
-
-
-
-
-
-
-
-
MAX
-
240
320
400
500
1000
2.0
10
5.0
µA
P
F
UNITS
V
V
F
-
-
-
mV
I
R
C
j
t
rr
-
-
-
ns
2006-3
RECTRON [ RECTRON SEMICONDUCTOR ]
