RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
BAT54
SOT-23 SCHOTTKY DIODE
FEATURES
* Power Dissipation
PD : 200mW(Tamb= 25
O
C)
SOT-23
MECHANICAL DATA
*
*
*
*
*
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.008 gram
0.055(1.40)
0.047(1.20)
0.006(0.15)
0.003(0.08)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
O
0.019(2.00)
0.071(1.80)
0.118(3.00)
0.110(2.80)
Dimensions in inches and (millimeters)
MAXIMUM RATINGES
( @ T
A
= 25
o
C unless otherwise noted )
RATINGS
Peak Repetitive Peak reverse voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
Max. Steady State Power Dissipation @T
A
=25
o
C
Max. Operating Temperature Range
Storage Temperature Range
I
F
P
D
T
J
T
STG
200
200
150
-55 to +150
mA
mW
o
SYMBOL
VALUE
UNITS
V
R
30
V
C
C
o
ELECTRICAL CHARACTERISTICS
( @ T
A
= 25
o
C unless otherwise noted )
CHARACTERISTICS
Reverse breakdown voltage (I
R
=100µA)
Reverse voltage leakage current (V
R
=25V)
Forward voltage (I
F
=0.1mA)
(I
F
=1mA)
(I
F
=10mA)
(I
F
=30mA)
(I
F
=100mA)
Diode capacitance (V
R
=1V,f=1MHz)
Reveres recovery time (I
F
=I
R
=10mA,Irr=0.1 X I
R
, R
L
=100Ω)
C
D
-
-
-
-
V
F
-
-
SYMBOL
V
(BR)R
I
R
MIN.
30
-
TYP.
-
-
MAX.
-
2
0.24
0.32
0.40
0.50
1
10
5
pF
nS
2006-3
V
UNITS
V
µA
t
rr
RECTRON [ RECTRON SEMICONDUCTOR ]
