MIL-M-38510/101J
1.5 Power and thermal characteristics.
Case outlines
A,B,D
C,E,P
G
I
H
F
Z
2
Maximum allowable power
dissipation
350 mW at T
A
= +125°C
400 mW at T
A
= +125°C
330 mW at T
A
= +125°C
350 mW at T
A
= +125°C
330 mW at T
A
= +125°C
400 mW at T
A
= +125°C
330 mW at T
A
= +125°C
8/ at T
A
= +125°C
Maximum
Maximum
θ
JC
60°C/W
35°C/W
40°C/W
40°C/W
60°C/W
35°C/W
21°C/W
60°C/W
θ
JA
140°C/W
120°C/W
150°C/W
140°C/W
150°C/W
120°C/W
225°C/W still air
142°C/W 500 LFPM
120°C/W
2. APPLICABLE DOCUMENTS
2.1 Government documents.
2.1.1 Specifications, standards, and handbooks. The following specifications and standards form a part of this
specification to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-38535
- Integrated Circuits (Microcircuits) Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883
MIL-STD-1835
- Test Method Standard for Microelectronics.
- Interface Standard Electronic Component Outlines.
(Copies of these documents are available from the Standardization Document Order Desk, 700 Robbins Avenue, Building
4D, Philadelphia, PA 19111-5094 or http://astimage.daps.dla.mil/quicksearch/ or www.dodssp.daps.mil.)
2.2 Order of precedence. In the event of a conflict between the text of this specification and the references cited herein
the text of this document shall takes precedence. Nothing in this document, however, supersedes applicable laws and
regulations unless a specific exemption has been obtained.
______
8/ P
D
= 102 mW for device type 01. P
D
= 75 mW for device type 03. P
D
= 149 mW for device type 04.
3
RAYTHEON [ RAYTHEON COMPANY ]
