Preliminary
WM71004 / WM71008 / WM71016
4/8/16Kbit Secure F-RAM Memory with
Gen-2 RFID Access
DESCRIPTION
The WM710xx is a RFID transponder IC with
nonvolatile memory employing an advanced
ferroelectric process. A ferroelectric random access
memory, or F-RAM, is nonvolatile and performs
reads and writes like a RAM. It provides reliable data
retention for 20 years while eliminating the
complexities, overhead, and system level reliability
problems caused by EEPROM and other nonvolatile
memories.
Unlike EEPROM’s, the WM710xx write operations
are zero power – there is no power or speed premium
paid for executing writes into the WM710xx as
compared to read power and speed. Operation of the
memory is fully symmetric: identical read and write
characteristics in terms of power, speed, and
reliability.
The WM710xx’s RFID interface is compliant with
the EPC Class-1 Generation-2 UHF RFID Protocol
for Communications at 860 MHz – 960 MHz,
Version 1.2.0 Specification for RFID Air Interface.
The WM710xx is a two chip configuration offered in
various forms: standard IC package or wafers. All
specifications discussed herein are applicable to the
combined chipset operation.
FEATURES
4/8/16 Kbit Ferroelectric Nonvolatile RAM
•
Organized as 256/512/1024 x 16 bits
•
Very High Read/Write Endurance (> 10
15
)
•
20-Year Data Retention
•
Gamma Stability Demonstrated to > 30 kGy
•
Symmetric Read/Write Operation
•
Advanced High-Reliability Ferroelectric Process
Interface and Security Features
•
EPC Class 1 Gen2 (ISO18000-6C) RFID
Compliant Interface (revision 1.2.0)
•
192-Bit Memory: 96-Bit Electronic Product
Code™ (EPC), 32-Bit Access Password, 32-Bit
KILL Password, 64-Bit TID Memory (Factory
Programmed and Locked)
•
Inventory, Read, Write and Erase features
•
Kill Command
•
Block Permalock Command
•
Access Command
•
UHF carrier frequencies from 860 MHz to 960
MHz ISM band, ASK demodulation
•
Link frequencies up to 640Kbps and reader-to-
tag rates up to 128Kbps read and write
transmission
Custom Features
•
Stored Address Pointer to Improve Data Write
Speed
•
Stored Address Pointer Lock
•
Block Write Command
•
Variable USER Memory Block Size Support
Ultra Low Power Operation
•
Memory Read/Write Sensitivity: < -6 dBm (typ.)
Industry Standard Configurations
•
Industrial Temperature -40° C to +85° C
•
Bumped Wafers
•
8-pin UDFN
WM71016
RFID Tag
with F-RAM
RFID
Reader
(Class-1
Gen-2)
Figure 1. System Block Diagram
This is a product that has fixed target specifications but are
subject to change pending characterization results.
Rev. 1.2
Sept. 2010
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
http://www.ramtron.com
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