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SM2604T-10 参数 Datasheet PDF下载

SM2604T-10图片预览
型号: SM2604T-10
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM, 4MX16, 4.7ns, CMOS, PDSO54, TSOP-54]
分类和应用: 时钟动态存储器光电二极管
文件页数/大小: 33 页 / 305 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
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Preliminary Datasheet
Pin Descriptions
Symbol
CLK
CKE
Type
Input
Input
Function
64Mbit – Enhanced SDRAM
8Mx8, 4Mx16 ESDRAM
Clocks: All ESDRAM input signals are sampled on the rising edge of CLK.
Clock Enable: CKE activates (high) or deactivates (low) CLK internally. Deactivating the
clock provides a means of entering Power-Down and Self-Refresh modes (all banks idle),
or Clock Suspend mode. CKE is synchronous until the device enters Power-Down and
Self-Refresh modes where it is asynchronous until the mode is exited.
Chip Select: CS# enables (low) or disables (high) the command decoder. When the
command decoder is disabled, new commands are ignored but previous operations
continue.
Command Inputs: Sampled on the rising edge of CLK, these inputs define the command
to execute.
Bank Addresses: These inputs define to which of the 4 banks a given command is
applied. They are also used to define the MRS and EMRS commands.
Address Inputs: A0-A11 define the row address during the Bank Activate command. For
the 8Mx8 device, A0-A8 define the column address during Read and Write commands.
For the 4Mx16 device, A0-A7 defines the column address during Read and Write
commands. A10/AP invokes the Auto-Precharge operation. During manual Precharge
commands, A10/AP low specifies a single bank precharge while A10/AP high precharges
all banks. The address inputs are also used to program the Mode registers.
Data I/O: Data bus inputs and outputs. For Write cycles, input data is applied to these pins
and must be set up and held relative to the rising edge of clock. For Read cycles, the
device drives output data on these pins after the CAS latency is satisfied.
Data I/O Mask Input: DQM inputs mask write data (zero latency) and act as a
synchronous output enable (2-cycle latency) for read data. In an optional mode provided
through settings in the Extended Mode register, output enable latency is one when CAS
latency is one.
Power (+3.3 V) and ground for the input buffers and core logic.
Isolated power and ground for output buffers. V
DDQ
may be connected to either 3.3V or
2.5V power.
No connect - open pin.
CS#
Input
RAS#, CAS#,
WE#
BA1, BA0
A0-A11
Input
Input
Input
DQ0-DQ15
Input/
Output
DQM
LDQM, UDQM
Input
V
DD
, V
SS
V
DDQ
, V
SSQ
NC
Supply
Supply
-
This is a product in sampling or pre-production phase of development. Charac-
teristic data and other specifications are subject to change without notice.
Enhanced Memory Systems Inc., 1850 Ramtron Dr., Colo Spgs, CO 80921
PHONE: (800) 545-DRAM; FAX: (719) 488-9095;
http://www.edram.com
Revision 1.1
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